Part Number Hot Search : 
DA104K TSM9926D L4805CV AOD2810 5KE130 B5819 G8925 CP2215
Product Description
Full Text Search
 

To Download HWF1682RA Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 HWF1682RA
L-Band GaAs Power FET
January 2006 V4
Outline Dimensions Features
* High Output Power: P1dB=37 dBm (typ.) * High Gain: GL=11.5 dB (typ.) * High Efficiency: PAE =45% (typ.) * *
High Linearity: IP3=48 dBm(typ.) Class A or Class AB Operation
* Low Cost
Description
The HWF1682RA is a high power GaAs MESFET designed for various RF and Microwave applications. It is presently offered in a low cost, surface-mountable ceramic package.
Absolute Maximum Ratings
VDS
[1]
RA Package (Ceramic)
Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation
+15V -5V IDSS 10 mA 175C -65 to +175C 15 W
VGS ID IG TCH TSTG PT [1]
[2]
Hexawave recommends that the quiescent drain-source operating voltage (VDS) should not exceed 10 Volts. Mounted on an infinite heat sink.
[2]
Electrical Specification at 25C
Symbol IDSS VP Parameters Saturated Drain Current Pinch-off Voltage Transconductance Thermal Resistance Output Power @1dB Gain Linear Power Gain Power-added Efficiency (Pout = P1dB) Third-order Intercept Point
[3]
Conditions VDS=3V, VGS=0V VDS=3V, IDS=100 mA VDS=3V, IDS=1000 mA Channel to Case VDS=10V IDS=0.5IDSS f=2.4 GHz
Units mA V mS C/W dBm dB % dBm
Min. 1500 -3.5 36.0 10.5 -
Typ. 2000 -2.0 1000 7 37.0 11.5 40 48
Max. 2600 -1.5 10 -
gm
Rth P1dB GL PAE IP3
[3] Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP3
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw All specifications are subject to change without notice.
HWF1682RA
L-Band GaAs Power FET
January 2005 V4
Typical Performance at 25C
Output Power, Efficiency & Gain vs. Input Power
VDS=10V, IDS=0.5IDSS
Pout (dBm)
f=2.4GHz
40 35 40 30 50
Gain (dB)
25 20 15
add
30
20
Gain
10 10 5 0 10 12 14 16 18 20 22 24 26 28 30 0
Pin (dBm)
Power Derating Curve 16 (25,15)
Total Power Dissipation,PT (W)
12
8
4 (175,0) 0 0 50 100 150 200 Case Temperature,TC ()
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. .
Pout
add
(%)
HWF1682RA
L-Band GaAs Power FET
January 2005 V4
Typical S-Parameters (Common Source, TA=25C, VDS=10V, IDS=0.5IDSS)
Freq (GHz)
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
S11
Mag.
0.957 0.958 0.955 0.959 0.959 0.964 0.967 0.970 0.974 0.976 0.980 0.980 0.982 0.984 0.984 0.983 0.988 0.982 0.984 0.983 0.979 0.980 0.979 0.976 0.970 0.971 0.944 0.948 0.949 0.935 0.924 0.908 0.864
S21
Ang. Mag.
5.836 4.912 4.247 3.740 3.347 3.008 2.738 2.499 2.306 2.135 1.979 1.852 1.733 1.632 1.539 1.459 1.382 1.311 1.249 1.191 1.141 1.092 1.047 1.006 0.970 0.932 0.704 0.585 0.491 0.421 0.385 0.396 0.484
S12
Ang.
93.270 88.030 83.630 79.260 75.390 71.960 68.580 65.350 62.250 59.190 56.240 53.480 50.650 47.870 45.170 42.660 39.890 37.480 34.980 32.690 30.440 28.060 25.800 23.550 21.350 19.290 -1.870 -24.040 -46.540 -68.180 -85.680
S22
Mag.
0.516 0.518 0.519 0.523 0.525 0.528 0.532 0.539 0.545 0.548 0.554 0.560 0.568 0.574 0.582 0.591 0.597 0.608 0.617 0.623 0.632 0.639 0.647 0.657 0.666 0.674 0.747 0.782 0.800 0.837 0.834 0.802 0.803
Mag.
0.022 0.022 0.022 0.023 0.022 0.022 0.022 0.022 0.021 0.021 0.021 0.021 0.021 0.021 0.020 0.020 0.019 0.020 0.019 0.019 0.019 0.019 0.019 0.018 0.018 0.018 0.018 0.019 0.016 0.020 0.023 0.036 0.065
Ang.
7.790 5.880 3.140 1.820 -0.260 -2.230 -4.410 -4.110 -4.020 -4.810 -6.110 -6.420 -7.700 -8.290 -8.920 -9.030 -9.200 -9.880 -9.760 -10.090 -10.290 -10.390 -9.250 -10.060 -10.510 -10.320 -10.920 -14.240 -7.680 -19.950 -31.840 -24.600 -47.010
Ang.
-169.860 -171.630 -172.930 -173.550 -174.270 -174.840 -175.180 -175.490 -175.950 -176.090 -176.720 -176.980 -177.250 -177.590 -178.040 -178.560 -179.020 -179.290 -179.570 -179.900 179.530 179.250 178.880 178.480 178.050 177.570 170.720 158.930 144.170 131.590 122.030 114.020 101.770
-152.240 -158.920 -163.540 -167.680 -171.130 -174.110 -176.660 -178.890 179.350 177.410 175.900 174.170 172.590 171.100 169.790 168.610 167.130 165.970 164.680 163.500 162.420 160.900 160.110 158.800 157.980 156.720 145.920 133.060 119.090 104.540 93.670 82.170 63.210
-100.370 -121.250
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. .


▲Up To Search▲   

 
Price & Availability of HWF1682RA

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X